For citation:
Usanov D. A., Gorbatov S. S., Kvasko V. Y. Formation of a multi-domain spatial structure in gaas Gunn diode as a nonlinear phenomenon. Izvestiya VUZ. Applied Nonlinear Dynamics, 2013, vol. 21, iss. 5, pp. 51-59. DOI: 10.18500/0869-6632-2013-21-5-51-59
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Russian
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Article
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537.311.322
Formation of a multi-domain spatial structure in gaas Gunn diode as a nonlinear phenomenon
Autors:
Usanov Dmitrij Aleksandrovich, Saratov State University
Gorbatov Sergej Sergeevich, Saratov State University
Kvasko Vladimir Yurevich, Saratov State University
Abstract:
Experimental studies of stationary distributions of the electric field intensity and the concentration of charge carriers in the Gunn diode have been provided by using near-field microwave microscope. The numerical computer calculation of these quantities based on the dependence of electrons mobility and diffusion coefficient on the electric field has been carried out. The existence of a multidomain mode of Gunn diodes has been found experimentally and confirmed theoretically.
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Reference:
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Received:
10.04.2013
Accepted:
16.07.2013
Published:
31.12.2013
Journal issue:
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