For citation:
Rokah A. G., Stecjura S. V., Serdobincev A. A., Zhukov A. G. On secondary-ion photoeffect. Izvestiya VUZ. Applied Nonlinear Dynamics, 2006, vol. 14, iss. 1, pp. 113-119. DOI: 10.18500/0869-6632-2006-14-1-113-119
On secondary-ion photoeffect
A secondary ion yield change from photoconducting semiconductors under influence of illumination has been established (secondary-ion photoeffect). The classification of this phenomenon is given: the normal and the anomalous secondary ion photoeffects are defined. The normal photoeffect is found in reducing of cadmium positive secondary ion yield from CdS-PbS sample under illumination as a result of electron work function decrease. The anomalous effect consists in increase of lead positive secondary ion yield from the same sample under illumination (up to 1200% about in dark). Explanation of the anomalous effect based on non-equilibrium carriers recombination rate increase in narrow gap inclusions under illumination is suggested. Ion yield dependence of electron work function change is approximated on the hypothesis that this change is defined by Fermi electron quasilevel varying due to illumination.
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