ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)

низкочастотный шумовой сигнал (0.01...3.0 MHz)

Effect of low-frequency noise signal on microwave oscillator of deterministic oscillation at si–ge transistor

Aim of this work – to show the possibility of oscillation chaotization at the effect of low- frequency (0.1...3.0 MHz) noise signal both on feed circuit of IMPATT diode in one-frequency IMPATT diode oscillator (IMPATT-DO) and on feed circuit of transistor in one-frequency transistor oscillator. It supposed to confirm the assumption, said early, that this effect, found by us in first time for one-frequency IMPATT-DO, can take place for any semiconductor oscillators with p–n-transition, more exactly, it’s nonlinear current-voltage characteristic. Method.

На сайте журнала 16.07.2020 запланированы технические работы. В это время сайт может быть недоступен. С уважением, администрация сайта.