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Influence of input signal power on magnetostatic surface waves propagation in yttrium-iron garnet films on silicon substrates

Sakharov Valentin Konstantinovich, Saratov Branch of Kotel`nikov Institute of Radiophysics and Electronics of Russian Academy of Sciences
Khivintsev Y. V., Saratov State University
Vysotskii S. L., Saratov Branch of Kotel`nikov Institute of Radiophysics and Electronics of Russian Academy of Sciences
Stognij Aleksandr Ivanovich, Scientific-Practical Materials Research Centre NAS of Belarus
Dudko Galina Mihajlovna, Saratov Branch of Kotel`nikov Institute of Radiophysics and Electronics of Russian Academy of Sciences
Filimonov Y. A., Saratov Branch of Kotel`nikov Institute of Radiophysics and Electronics of Russian Academy of Sciences

Yttrium iron garnet (YIG) films on silicon substrates (Si) are of a great interest due to compatibility of their fabrication with semiconductor technologies and, thus, possible integration of magnonic and electronic devices on one chip. However, features of spin wave propagation in YIG films on semiconductor substrates remain almost unexplored. In this work with the help of network analyzer and microwave probe station we investigate the influence of input signal power on propagation of magnetostatic surface waves (MSSW) in the delay line structures based on YIG/Si films deposited by ion-beam evaporation. It is shown that dependence of output MSSW power (Pout) on input power level (Pin) is determined by the position of MSSW frequency relative to the frequency fmax corresponding to the maximum of MSSW transmission spectrum. For frequencies f > fmax the dependence Pout(Pin) monotonically decreases with input power growth while at frequencies f < fmax it has the maximum. Such behavior is qualitatively different from the dependences Pout(Pin) of epitaxial YIG films on substrates from gadolinium-gallium garnet (GGG). We assume that described features result from the higher damping level (two orders greater) of spin waves in YIG/Si films comparing to the epitaxial YIG/GGG structures. As a consequence, thresholds of MSSW parametric instability considerably increase, MSSW spectrum shifts towards the lower frequencies because of dynamic demagnetization and thermal heating induced by microwave power of propagating wave. In turn, this shift strongly influences the behavior of Pout(Pin) dependence. Thus, the described effect should be considered for the identification of true thresholds of parametric instability of spin waves in YIG/Si films.

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