ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)


For citation:

Sanin A. L., Ermolaev J. L. Current structure reconstruction under electron scattering by ionized donors and phonones in inhomogeneous semiconductor. Izvestiya VUZ. Applied Nonlinear Dynamics, 1995, vol. 3, iss. 5, pp. 55-64.

This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
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Language: 
Russian
Article type: 
Article
UDC: 
537.86/87:530.182

Current structure reconstruction under electron scattering by ionized donors and phonones in inhomogeneous semiconductor

Autors: 
Sanin Andrej Leonardovich, Peter the Great St. Petersburg Polytechnic University
Ermolaev Ju. L., Peter the Great St. Petersburg Polytechnic University
Abstract: 

By using the moments of Boltzman'’s equation the analysis of the electron response in n-type GaAs with the space-periodic donor density modulation was carried out. The computer calculations are performed for the different scattering mechanisms and their joint action to the oscillations and structure reconstruction. Under threshold conditions the strong longitudinal optical phonone scattering dominates. The generation of subharmonics, high harmonics and small scale relaxation oscillation define the nonlinear dynamics of the electrons.

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Received: 
06.10.1994
Accepted: 
09.03.1995
Published: 
21.10.1996