ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)


Cite this article as:

Alekseev K. N., Balanov A. G., Koronovskii A. A., Maksimenko V. A., Moskalenko O. I., Hramov A. E. Nonlinear dynamics of small perturbation of semiconductor superlattice reference state near generation threshold. Izvestiya VUZ. Applied Nonlinear Dynamics, 2012, vol. 20, iss. 5, pp. 165-178. DOI: https://doi.org/10.18500/0869-6632-2012-20-5-165-178

Language: 
Russian

Nonlinear dynamics of small perturbation of semiconductor superlattice reference state near generation threshold

Autors: 
Alekseev Kirill Nikolaevich, Loughborough University
Balanov Aleksandr Gennadevich, Loughborough University
Koronovskii Aleksei Aleksandrovich, Saratov State University
Maksimenko Vladimir Aleksandrovich, Saratov State University
Moskalenko Olga Igorevna, Saratov State University
Hramov Aleksandr Evgenevich, Saratov State University
Abstract: 

Present research is focused on the dynamics of the perturbation of semiconductor superlattice (SL) reference state near the generation threshold as for the case of influence of titled magnetic field as for the case when the magnetic field is absent. The evolution of the considered perturbation is described with the help of linearized evolution operator. It has been shown that increase of the applied voltage leads to decrease of the attenuation coefficient, which becomes zero in bifurcation point where stationary state loses it’s stability. Meanwhile, the applied titled magnetic field has an strong effect on the perturbation dynamics, value of applied voltage corresponding to the threshold point and the frequency of arising current oscillations.

DOI: 
10.18500/0869-6632-2012-20-5-165-178
References: 

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