ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)


For citation:

Alekseev K. N., Balanov A. G., Koronovskii A. A., Maksimenko V. A., Moskalenko O. I., Hramov A. E. Nonlinear dynamics of small perturbation of semiconductor superlattice reference state near generation threshold. Izvestiya VUZ. Applied Nonlinear Dynamics, 2012, vol. 20, iss. 5, pp. 165-178. DOI: 10.18500/0869-6632-2012-20-5-165-178

This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
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Language: 
Russian
Article type: 
Proceedings
UDC: 
517.9, 530.182, 621.38

Nonlinear dynamics of small perturbation of semiconductor superlattice reference state near generation threshold

Autors: 
Alekseev Kirill Nikolaevich, Loughborough University
Balanov Aleksandr Gennadevich, Loughborough University
Koronovskii Aleksei Aleksandrovich, Saratov State University
Maksimenko Vladimir Aleksandrovich, Immanuel Kant Baltic Federal University
Moskalenko Olga Igorevna, Saratov State University
Hramov Aleksandr Evgenevich, Immanuel Kant Baltic Federal University
Abstract: 

Present research is focused on the dynamics of the perturbation of semiconductor superlattice (SL) reference state near the generation threshold as for the case of influence of titled magnetic field as for the case when the magnetic field is absent. The evolution of the considered perturbation is described with the help of linearized evolution operator. It has been shown that increase of the applied voltage leads to decrease of the attenuation coefficient, which becomes zero in bifurcation point where stationary state loses it’s stability. Meanwhile, the applied titled magnetic field has an strong effect on the perturbation dynamics, value of applied voltage corresponding to the threshold point and the frequency of arising current oscillations.

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Received: 
08.05.2012
Accepted: 
08.05.2012
Published: 
31.01.2013
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