ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)


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Semenov A. A., Usanov D. A., Kolokin A. A. Temperature dependence of complex oscillatory operation modes of the magnetically controlled two-terminal device oscillator. Izvestiya VUZ. Applied Nonlinear Dynamics, 2012, vol. 20, iss. 2, pp. 40-53. DOI: 10.18500/0869-6632-2012-20-2-40-53

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Russian
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Article
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621.38.049.77

Temperature dependence of complex oscillatory operation modes of the magnetically controlled two-terminal device oscillator

Autors: 
Semenov Andrej Andreevich, Saratov State University
Usanov Dmitrij Aleksandrovich, Saratov State University
Kolokin Aleksandr Anatolevich, Saratov State University
Abstract: 

The results of operation modes research of the auto-generating system based on a magnetically controlled two-terminal active device with negative differential resistance and N-type current-voltage characteristic are represented. Experimental graphics of oscillatory modes temperature dependencies of the researched dynamic system are given. It is shown, that the temperature mode of the active semiconductor device can rendered essential influence on its current-voltage characteristic, what is necessary to take into account while analyzing operation modes of such devices in complex dynamic modes.

Reference: 
  1. Arefyev AA, Serebnov AN, Stepanova LN. Equivalents of devices with negative differential resistance. Moscow: Znanie; 1987. 64 p. (in Russian).
  2. Stepanova LN. New devices with negative differential resistance Telecommunications and Radio Engineering. 1991;8:42–51 (in Russian).
  3. Baskakov EN, Stepanova LN. A device with a controlled voltage-ampere characteristic of the S-type. Radio Engineering. 1977;32(7):85–89 (in Russian).
  4. Aref'ev AA, Stepanova LN. Amplifier using an equivalent of a p-n-p-n structure with controlled S-type volt-ampere characteristic. Meas. Tech. 1977;20:873–876. DOI: 10.1007/BF00824671.
  5. Chaplygin YA, Galyshko AI, Semenov AA, Wenig SB, Usanov DA. Magnetothyristor with adjusted characteristics in low resistive condition. Semiconductors. 2004;3:41–45 (in Russian).
  6. Chaplygin YuA, Galushkov AI, Semenov AA, Usanov DA. Dinistor Controlled by Magnetic Field. Proceedings of Universities. Electronics. 2005;6:104c–104.
  7. Chaplygin YuA, AI Galushkov, A.A. Semenov, D.A. Usanov. Magnetosensible device with negative differential resistance and N–type volt ampere characteristic. Semiconductors. 2008;42(13):1536–1540.
  8. Chaplygin YuA, Galushkov AI, Semenov AA, Usanov DA. Semiconductor devices with magnetic field-controlled characteristics. V International Scientific and Technical Conference: Electronics and Informatics - 2005. Conference materials. Part 1. Moscow: MIET; 2005. p. 211. (in Russian).
  9. Usanov DA, Gorbatov SS, Semenov AA. Influence of bias voltage on stochastization of oscillations in Gann diodes in multi-circuit oscillatory system. Soviet Journal of Communications Technology and Electronics. 1991;36(12):2406–2409.
  10. Usanov DA, Venig SB, Gorbatov SS, Semenov AA. The influence of Gunn nonlinear impedance on microwave oscillators operation. Izvestiya VUZ. Applied Nonlinear Dynamics. 1994;2(5):35–45 (in Russian).
  11. Semenov AA. Investigation of nonlinear modes of operation of microwave semiconductor devices. Abstract. dis. Candidate of Physical and Mathematical Sciences. Saratov: Sarat. State Univ. Publ.; 1994. p.17 (in Russian).
  12. Usanov DA, Skripal’ AV, Gorbatov SS. Gunn diode low-frequency microwave generation characteristics. Izvestia VUZ. Radioelectronics. 1981;24(10):67–69 (in Russian).
  13. Bocharov EP, Korostelev GN, Khripunov MV. A model of stochastic self-oscillation in Gunn diode oscillators. Radiophys. Quantum Electron. 1987;30:78–84. DOI: 10.1007/BF01034079.
  14. Kalyanov EV. Stochastization of low-frequency oscillations of generators on MEP-diode Radio Engineering and Electronic Physics. 1984;29(1):83–87.
  15. Veselov GI, Egorov EN, Alekhin YuN, et al. Microelectronic devices of the microwave. Moscow: Vysshaya Shkola; 1988. 279 p. (in Russian).
  16. Khotuntsev YuL, Tamarchak DYa. Synchronized Oscillators and Autodyne Based on Semiconductor Devices. Moscow: Radio i Svyz’; 1982. 240 p. (in Russian).
  17. Davydova NS, Danyushevsky YuZ. Diode generators and very high frequency amplifiers. Moscow: Radio i Svyz’; 1986. 184 p. (in Russian).
  18. Moon FC. Chaotic vibrations : an introduction for applied scientists and engineers. New York: John Wiley & Sons; 1992. 508 p..
  19. Bryant P, Jeffries C. Experimental Study of Driven Nonlinear Oscillator Exhibiting Hopf Bifurcations, Strong Resonances, Homoclintc Bifurcations and Chaotic Behavior. Lawrence Berkeley Laboratory report, LBL-16949, January; 1984.
  20. Kuznetsov SP. Dynamical Chaos: Course of Lectures. Series: Modern theory of oscillations and waves. Moscow: Fizmatlit; 2001. 296 p. (in Russian).
  21. Usanov DA, Wenig SB, Skvortsov SI. Magnetocontrolled generation with period-adding sequence and chaos in the circuit with magnetotransistor. Izvestiya VUZ. Applied Nonlinear Dynamics. 2000;8(5):43–47 (in Russian).
  22. Skvortsov SI. Experimental studies of generation modes with the addition of period and chaos in a circuit with a magnetotransistor. Nonlinear days in Saratov for young people - 2000: Collection of materials of the scientific school-conference. Saratov: GOSUNTS «College». 2000:137–139 (in Russian).
  23. Skvortsov SI. Nonlinear dynamic modes of operation of generators on magnetodiodes and magnetotransistors. Abstract. dis. Candidate of Physical and Mathematical Sciences. Saratov: Sarat. State Univ. Publ.; 2002. p.13. (in Russian).
  24. Skvortsov SI. Nonlinear dynamic modes of operation of generators on magnetodiodes and magnetotransistors. Dis. Candidate of Physical and Mathematical Sciences. Saratov; 2002. p. 63. (in Russian).
  25. Stepanova LN, Baskakov EN. Temperature stabilization of S-type BAH parameters in the transistor equivalent of p-n-p-n-structure. Radioengineering. 1976;31(9):77–83.
  26. Stepanova LN. Compensation by active elements of temperature drift of S-type VAC parameters in equivalents of p-n-p-n-structure. Radioengineering. 1979;34(12):65.
Received: 
07.12.2011
Accepted: 
07.12.2011
Published: 
29.06.2012
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