ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)


For citation:

Usanov D. A., Skripal A. V., Kalinkin M. Y. The reason of blurring regions of phase pattern for autodine signal of semiconductor laser during movement of the external reflector. Izvestiya VUZ. Applied Nonlinear Dynamics, 2000, vol. 8, iss. 1, pp. 15-20. DOI: 10.18500/0869-6632-2000-8-1-15-20

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Language: 
Russian
Article type: 
Article
UDC: 
535;621.378.35

The reason of blurring regions of phase pattern for autodine signal of semiconductor laser during movement of the external reflector

Autors: 
Usanov Dmitrij Aleksandrovich, Saratov State University
Skripal Anatolij Vladimirovich, Saratov State University
Kalinkin Mikhail Yurevich, Saratov State University
Abstract: 

The computer simulation of the experimentally observed blurring of phase trajectories on the certain parts has been made with the help of numerical calculations of the system of differential equations for semiconductor laser with vibrating external reflector. The relation of the blurring of trajectories with generation of relaxation oscillations on these parts has been found. It has been shown that semiconductor laser in the generation regime of relaxation oscillations has the high sensitivity to the fluctuations of parameters of external optical feedbackand to the non-stability of power supply.

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Reference: 
  1. Usanov DA, Skripal AV, Kalinkin MY. Formation of an autodyne signal in a semiconductor laser when an external reflector moves. Izvestiya VUZ. Applied Nonlinear Dynamics. 1998;6(1):3–8. (in Russian).
  2. Skripal AB, Usanov DA, Vagarin VA, Kalinkin MY. Autodynedetection in a semiconductor laser with the movement of an external reflector. Tech. Phys.;69(1):72–75. (in Russian).
  3. Lang R, Kobayashi K. External optical feedback effects on semiconductor injection laser properties. IEEE J. Quant. Electron. 1980;16(3):347–355. DOI: 10.1109/JQE.1980.1070479.
  4. Tromborg B, Osmundsen JH, Olesen H. Stability analysis for а semiconductor lasers in аn external cavity. IEEE J. Quant. Electron. 1984;20(9):1023–1032. DOI: 10.1109/JQE.1984.1072508.
  5. Osinski M, Buus J. Linewidth broadening factor in semiconductor lasers (аn overview). IEEE J. Quant. Electron. 1987;23(1):9–29. DOI: 10.1109/JQE.1987.1073204.
Received: 
18.10.1999
Accepted: 
01.12.1999
Published: 
15.04.2000