ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)

For citation:

Usanov D. A., Gorbatov S. S., Kvasko V. Y. Formation of a multi-domain spatial structure in gaas Gunn diode as a nonlinear phenomenon. Izvestiya VUZ. Applied Nonlinear Dynamics, 2013, vol. 21, iss. 5, pp. 51-59. DOI: 10.18500/0869-6632-2013-21-5-51-59

This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
Full text PDF(Ru):
(downloads: 121)
Article type: 

Formation of a multi-domain spatial structure in gaas Gunn diode as a nonlinear phenomenon

Usanov Dmitrij Aleksandrovich, Saratov State University
Gorbatov Sergej Sergeevich, Saratov State University
Kvasko Vladimir Yurevich, Saratov State University

Experimental studies of stationary distributions of the electric field intensity and the concentration of charge carriers in the Gunn diode have been provided by using near-field microwave microscope. The numerical computer calculation of these quantities based on the dependence of electrons mobility and diffusion coefficient on the electric field has been carried out. The existence of a multidomain mode of Gunn diodes has been found experimentally and confirmed theoretically.

  1. Usanov DA, Gorbatov SS, Sorokin AN, Kwasko VU. Device for measuring material parameters. Pat. 2373545 C1 Russian Federation, MPK G01R27/26. No 2008122332/28.
  2. Usanov DA, Gorbatov SS, Kvasko VY. Near-field microwave microscope with low-dimension resonator of inductive diaphragm-capacitor diaphragm type. Journal of the Russian Universities. Radioelectronics. 2010;6:66–59.
  3. Usanov DA, Gorbatov SS. Resonances in the "post with gap - Adjacent piston" waveguide system. Radioelectronics and Communications Systems. 2006;49(2):18–22.
  4. Usanov DA, Gorbatov SS, Kvasko VYu. Measurement of the mobility and concentration of charge carriers in a Gunn gallium-arsenide diode using a near-field microwave microscope. Semiconductors. 2013;47(13):1715–1719. DOI: 10.1134/S1063782613130149.
  5. Murayama K, Ohmi T. Static negative resistance in highly doped Gunn diodes and application to switching and amplification. Japan J. Appl. Phys. 1973;12(12):1931–1940. DOI: 10.1143/JJAP.12.1931.
  6. Bareikis B, Matulenis A, Pozhela Yu. et al. Electrons in semiconductors. Issue 3. Diffusion of hot electrons. Ed. Pozhel Yu. Vilnius: Mokslas; 1981. 212 p. (In Russian).
  7. Adirovich EI, Karageorgiy-Alkalaev PM, Leiderman AJ. Double injection currents in semiconductors. Ed. Galperin EI. Moscow: Sovet radio; 1978. 320 p. (In Russian).
  8. Trubetskov DI, Mchedlova EU, Krasichkov LV. Introduction to the theory of the self-organization of open systems. Moscow: Fizmatlit; 2002. 200 p. (In Russian).
Short text (in English):
(downloads: 70)