For citation:
Usanov D. A., Gorbatov S. S., Kvasko V. Y., Fadeev A. V. Nonlinear dynamics of the formation of a spatially inhomogeneous structure in pin diode. Izvestiya VUZ. Applied Nonlinear Dynamics, 2014, vol. 22, iss. 4, pp. 91-99. DOI: 10.18500/0869-6632-2014-22-4-91-99
Nonlinear dynamics of the formation of a spatially inhomogeneous structure in pin diode
The paper presents the results of experimental investigation of stationary distributions of the electric field and the charge carrier concentration in the PIN diode. The investigations have been carried out by use of nearfield scanning microwave microscope. Numerical calculations of these values have been performed taking into account the dependence of the mobility and the diffusion coefficient of electrons and holes on the electric field. The alternating maxima and minima form of the field distribution near the contacts and the conductivity has been demonstrated.
- Usanov DA, Gorbatov SS, Kvasko VJ. Formation of a multi-domain spatial structure in gaas gunn diode as a nonlinear phenomenon. Izvestiya VUZ. Applied Nonlinear Dynamics. 2013;21(5):51—59 (in Russian). DOI: 10.18500/0869-6632-2013-21-5-51-59.
- Adirovich EI. Double Injection Currents In Semiconductors. Moscow: Sovetskoe Radio; 1978. 320 p. (in Russian).
- Baranov LI, Gamanyuk VB, Usanov DA. To the theory of p-n-n + and p-n-m diodes. Sov. J. Commun. Technol. Electron. 1972;17(11):2409 (in Russian).
- Mayer JW, Marsh O, Baron R. Double injection in long silicon p-i-n structures. Phys. Rev. 1965;137(1A):A286—A295. DOI: 10.1103/PhysRev.137.A286.
- Baranov LI, Vagarin AY, Gamanyuk VB, Usanov DA. Deviation from neutrality in layered semiconductor structures as a result of double injection. In: Problems of Dielectric Electronics. Tashkent; 1974. P. 499 (in Russian).
- Gribnikov ZS. Spatial oscillations of the electric field and concentrations of charge carriers during bipolar drift in a semiconductor. Soviet Physics. Semiconductors. 1975;9(9):1710—1716 (in Russian).
- Usanov DA, Gorbatov SS, Kvasko VY. Near-field microwave with low-dimension resonator of inductive diaphragm-capacitor diaphragm type. Radioelectronics and Communications Systems. 2010;6:66—69 (in Russian).
- Pat. 2373545 С1 Russian Federation, MPK G01R27/26. Material Measurement Device / Usanov DA, Gorbatov SS, Sorokin AN, Kvasko VY; No. 2008122332/28; appl. 03.06.2008. publ. 20.11.2009.
- Conwell E. High Field Transport in Semiconductors. New York, London: Academic Press; 1967. 293 p.
- Bareikis V. Electrons In Semiconductors. Vol. 3. Diffusion of Hot Electrons. Vilnius: Mokslas; 1981. 212 p. (in Russian).
- Rose A. Concepts In Photoconductivity And Allied Problems. New York, London: John Wiley and Sons; 1963. 168 p.
- Trubetskov DI, Mchedlova ES, Krasichkov LV. Introduction to the Theory of the Self-Organization of Open Systems. Moscow: Fizmatlit; 2002. 212 p. (in Russian).
- 2018 reads