ISSN 0869-6632 (Print)
ISSN 2542-1905 (Online)


For citation:

Usanov D. A., Gorbatov S. S., Kvasko V. Y., Fadeev A. V. Nonlinear dynamics of the formation of a spatially inhomogeneous structure in pin diode. Izvestiya VUZ. Applied Nonlinear Dynamics, 2014, vol. 22, iss. 4, pp. 91-99. DOI: 10.18500/0869-6632-2014-22-4-91-99

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Russian
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Article
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537.311.322

Nonlinear dynamics of the formation of a spatially inhomogeneous structure in pin diode

Autors: 
Usanov Dmitrij Aleksandrovich, Saratov State University
Gorbatov Sergej Sergeevich, Saratov State University
Kvasko Vladimir Yurevich, Saratov State University
Fadeev Aleksej Vladimirovich, Saratov State University
Abstract: 

The paper presents the results of experimental investigation of stationary distributions of the electric field and the charge carrier concentration in the PIN diode. The investigations have been carried out by use of near­field scanning microwave microscope. Numerical calculations of these values have been performed taking into account the dependence of the mobility and the diffusion coefficient of electrons and holes on the electric field. The alternating maxima and minima form of the field distribution near the contacts and the conductivity has been demonstrated.

Reference: 
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Received: 
27.04.2014
Accepted: 
27.04.2014
Published: 
31.12.2014
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